Nexperia BV BUK9840-55/CU | 搜芯易Sourcengine

Nexperia BV BUK9840-55/CU

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 5A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
8.3
Drain Current-Max (ID) (A)
5
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
125
DS Breakdown Voltage-Min (V)
55
Feedback Cap-Max (Crss) (pF)
150
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
210
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
60
Pulsed Drain Current-Max (IDM) (A)
40
Drain-source On Resistance-Max (ohm)
0.04
Screening Level / Reference Standard
AEC-Q101; IEC-60134
Time@Peak Reflow Temperature-Max (s)
30