Nexperia BV BUK9616-55A,118 | 搜芯易Sourcengine

Nexperia BV BUK9616-55A,118

生命周期状态
Active
RoHS
符合RoHS标准
说明
N-channel TrenchMOS logic level FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
138
Drain Current-Max (ID) (A)
66
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
263
DS Breakdown Voltage-Min (V)
55
Feedback Cap-Max (Crss) (pF)
333
Turn-off Time-Max (toff) (ns)
742
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
120
Pulsed Drain Current-Max (IDM) (A)
263
Drain-source On Resistance-Max (ohm)
0.017
Screening Level / Reference Standard
IEC-134