Nexperia BV BUK7Y54-75B | 搜芯易Sourcengine

Nexperia BV BUK7Y54-75B

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 21.4A I(D), 75V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-235
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
59
Drain Current-Max (ID) (A)
21.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
75
Feedback Cap-Max (Crss) (pF)
70
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
33
Pulsed Drain Current-Max (IDM) (A)
86
Drain-source On Resistance-Max (ohm)
0.054
Screening Level / Reference Standard
AEC-Q101; IEC-60134