NEW JERSEY SEMICONDUCTOR PRODUCTS INC BUK455-100B | 搜芯易Sourcengine

NEW JERSEY SEMICONDUCTOR PRODUCTS INC BUK455-100B

生命周期状态
Active
说明
Power Field-Effect Transistor, 23A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
23
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
70
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
150
Turn-off Time-Max (toff) (ns)
240
Operating Temperature-Max (Cel)
175
Pulsed Drain Current-Max (IDM) (A)
92
Drain-source On Resistance-Max (ohm)
0.1
Screening Level / Reference Standard
IEC-134