BUK1M200-50SGTD
PHILIPS SEMICONDUCTORS
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 2.7A I(D), N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee4
- Operating ModeENHANCEMENT MODE
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)9.4
- Drain Current-Max (ID) (A)2.7
- Operating Temperature-Max (Cel)150
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BUK1M200-50SGTD
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