ONSEMI BUD42D-1G | 搜芯易Sourcengine

ONSEMI BUD42D-1G

生命周期状态
EOL
RoHS
符合RoHS标准
说明
TRANS NPN 350V 4A DPAK
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
BUILT-IN ANTISATURATION NETWORK
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
25
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
4
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
350
Time@Peak Reflow Temperature-Max (s)
40