INFINEON TECHNOLOGIES AG BTS247ZE3062AATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BTS247ZE3062AATMA1

生命周期状态
Active
说明
N-CHANNEL POWER MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
33
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
55
Avalanche Energy Rating (Eas) (mJ)
1300
Pulsed Drain Current-Max (IDM) (A)
180
Drain-source On Resistance-Max (ohm)
0.028
Screening Level / Reference Standard
AEC-Q101