- 生命周期状态Transferred
- 说明Silicon Controlled Rectifier, 5.7A I(T), 650V V(DRM)
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- J-STD-609 Codee0
- Terminal FinishTin/Lead (Sn/Pb)
- Trigger Device TypeSCR
- Holding Current-Max (mA)20
- Leakage Current-Max (mA)0.5
- On-State Voltage-Max (V)1.7
- On-state Current-Max (A)5.7
- DC Gate Trigger Voltage-Max (V)1.5
- Operating Temperature-Max (Cel)110
- DC Gate Trigger Current-Max (mA)15
- Non-Repetitive Pk On-state Cur (A)100
- Repetitive Peak Off-state Voltage (V)650
- Critical Rate of Rise of Off-state Voltage-Min (V/us)200
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BT151F650
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BT151F650