INFINEON TECHNOLOGIES AG BSZ120P03NS3EGATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSZ120P03NS3EGATMA1

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET P-CH 30V 11A/40A 8TSDSON
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PDSO-N8
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
DUAL
Additional Feature
ESD PROTECTED
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
11 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
73 mJ
Drain-source On Resistance-Max
0.02 ohm
Pulsed Drain Current-Max (IDM)
160 A