INFINEON TECHNOLOGIES AG BSZ010NE2LS5ATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSZ010NE2LS5ATMA1

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 25V 32A 8-Pin TSDSON EP T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-N8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
69
Drain Current-Max (ID) (A)
212
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Feedback Cap-Max (Crss) (pF)
98
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
160
Pulsed Drain Current-Max (IDM) (A)
848
Drain-source On Resistance-Max (ohm)
0.0013