INFINEON TECHNOLOGIES AG BSS88 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSS88

生命周期状态
Active
说明
N-CHANNEL ENHANCEMENT IGBT
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PBCY-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-92
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.25 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
12 pF
DS Breakdown Voltage-Min
240 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
8 ohm