Nexperia BV BSS192,115 | 搜芯易Sourcengine

Nexperia BV BSS192,115

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
240 V, P-channel vertical D-MOS transistor
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-243AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
0.2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
240
Feedback Cap-Max (Crss) (pF)
15
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max (ohm)
12
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
30