INFINEON TECHNOLOGIES AG BSP716NH6327 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSP716NH6327

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 2.3A I(D), 75V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.8
Drain Current-Max (ID) (A)
2.3
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
15.2
DS Breakdown Voltage-Min (V)
75
Feedback Cap-Max (Crss) (pF)
29
Turn-off Time-Max (toff) (ns)
100.3
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.8
Avalanche Energy Rating (Eas) (mJ)
33
Pulsed Drain Current-Max (IDM) (A)
9.2
Drain-source On Resistance-Max (ohm)
0.16
Screening Level / Reference Standard
AEC-Q101; IEC-61249-2-21; IEC-68-1