INFINEON TECHNOLOGIES AG BSP373 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSP373

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-Channel Small Signal MOSFETs (20 V to 800 V)
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED
Number of Elements
1
Reference Standard
AEC-Q101
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.7 A
Turn-on Time-Max (ton)
60 ns
Feedback Cap-Max (Crss)
105 pF
DS Breakdown Voltage-Min
100 V
Turn-off Time-Max (toff)
195 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
1.8 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
45 mJ
Power Dissipation Ambient-Max
1.8 W
Drain-source On Resistance-Max
0.3 ohm
Pulsed Drain Current-Max (IDM)
6.8 A