INFINEON TECHNOLOGIES AG BSP299E6327 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSP299E6327

生命周期状态
Contact Mfr
说明
MOSFET N-CH 500V 400MA SOT223-4
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.4 A
DS Breakdown Voltage-Min
500 V
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
130 mJ
Peak Reflow Temperature (Cel)
255
Drain-source On Resistance-Max
4 ohm
Pulsed Drain Current-Max (IDM)
1.6 A
Time@Peak Reflow Temperature-Max (s)
30