INFINEON TECHNOLOGIES AG BSP298 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSP298

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 0.45A I(D), 400V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.45 A
DS Breakdown Voltage-Min
400 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
3
Power Dissipation-Max (Abs)
1.8 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
130 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
3 ohm
Pulsed Drain Current-Max (IDM)
2 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED