INFINEON TECHNOLOGIES AG BSP17E6327 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSP17E6327

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 3.2A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
3.2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
50
Power Dissipation Ambient-Max (W)
1.8
Avalanche Energy Rating (Eas) (mJ)
6
Pulsed Drain Current-Max (IDM) (A)
12.8
Drain-source On Resistance-Max (ohm)
0.1