INFINEON TECHNOLOGIES AG BSP171P | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSP171P

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET, BSP171P, Infineon Technologies Features P-Channel Enhancement mode Logic level Avalanche rated Applications Power management functions Motor control On-board charger DC-DC Consumer Logic level translators Power MOSFET gate drivers
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
1.8
Drain Current-Max (ID) (A)
1.9
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
41
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
55
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
406
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
70
Pulsed Drain Current-Max (IDM) (A)
7.6
Drain-source On Resistance-Max (ohm)
0.3
Screening Level / Reference Standard
AEC-Q101; IEC-61249-2-21; IEC-68-1
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED