INFINEON TECHNOLOGIES AG BSP149E6327 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSP149E6327

生命周期状态
EOL
REACH
REACH compliant
说明
MOSFET N-CH 200V 660MA SOT223-4
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.48 A
DS Breakdown Voltage-Min
200 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
1.8 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
3.5 ohm
Pulsed Drain Current-Max (IDM)
1.44 A