Siemens AG BSP135E6327 | 搜芯易Sourcengine

Siemens AG BSP135E6327

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
0.1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Pulsed Drain Current-Max (IDM) (A)
0.3
Drain-source On Resistance-Max (ohm)
60