INFINEON TECHNOLOGIES AG BSP129L6327XT | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSP129L6327XT

生命周期状态
Active
说明
Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
0.35
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
240
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
1.8
Pulsed Drain Current-Max (IDM) (A)
1.4
Drain-source On Resistance-Max (ohm)
6