INFINEON TECHNOLOGIES AG BSP125L6327HTSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSP125L6327HTSA1

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-CH 600V 120MA SOT223-4
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Number of Elements
1
Reference Standard
AEC-Q101
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.12 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
45 ohm
Pulsed Drain Current-Max (IDM)
0.48 A