INFINEON TECHNOLOGIES AG BSO303P | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSO303P

生命周期状态
Active
说明
MOSFET 2P-CH 30V 8.2A 8DSO
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
2 P-Channel (Dual)
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Number of Elements
2
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
8.2 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
2 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
97 mJ
Peak Reflow Temperature (Cel)
235
Drain-source On Resistance-Max
0.021 ohm
Pulsed Drain Current-Max (IDM)
32.4 A