INFINEON TECHNOLOGIES AG BSO211PNTMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSO211PNTMA1

生命周期状态
EOL
说明
Transistor MOSFET Array Dual P-CH 20V 4.7A 8-Pin SOIC T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
2 P-Channel (Dual)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
4.7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
20 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
28 mJ
Drain-source On Resistance-Max
0.067 ohm
Pulsed Drain Current-Max (IDM)
18.8 A