INFINEON TECHNOLOGIES AG BSM50GD12DLCE3226 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSM50GD12DLCE3226

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.6 V
Number of Elements
1
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
50 A
Power Dissipation-Max (Abs)
350 W
Collector-emitter Voltage-Max
1200 V