INFINEON TECHNOLOGIES AG BSM50GAL120DN2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSM50GAL120DN2

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 76A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
3.2
Number of Elements
1
Power Dissipation-Max (W)
400
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
76
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200