BSM50GAL120DN2
Siemens AG
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3 V
- JESD-30 CodeR-CUFM-X7
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Fall Time-Max (tf)100 ns
- Number of Elements1
- Rise Time-Max (tr)100 ns
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationGENERAL PURPOSE
- Turn-on Time-Max (ton)100 ns
- Turn-on Time-Nom (ton)44 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Max (toff)500 ns
- Turn-off Time-Nom (toff)380 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)78 A
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max1200 V
- Power Dissipation Ambient-Max400 W
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BSM50GAL120DN2