Siemens AG BSM35GB120DN2 | 搜芯易Sourcengine

Siemens AG BSM35GB120DN2

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
3.2 V
JESD-30 Code
R-CUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Fall Time-Max (tf)
75 ns
Number of Elements
2
Rise Time-Max (tr)
120 ns
Number of Terminals
7
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Max (ton)
120 ns
Turn-on Time-Nom (ton)
60 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Max (toff)
600 ns
Turn-off Time-Nom (toff)
400 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
50 A
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
1200 V
Power Dissipation Ambient-Max
560 W