BSM25GB120D
Siemens AG
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.3 V
- JESD-30 CodeR-PUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Max (ton)40 ns
- Turn-on Time-Nom (ton)30 ns
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)25 A
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.2 V
- Collector-emitter Voltage-Max1200 V
- Power Dissipation Ambient-Max300 W
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BSM25GB120D