Siemens AG BSM25GB100D | 搜芯易Sourcengine

Siemens AG BSM25GB100D

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3.3
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
225
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
40
Turn-on Time-Nom (ton) (ns)
30
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
25
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.2
Collector-emitter Voltage-Max (V)
1000
Power Dissipation Ambient-Max (W)
300