BSM244F
Siemens AG
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 45A I(D), 400V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PUFM-X7
- ConfigurationSERIES, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)45 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)700 pF
- DS Breakdown Voltage-Min400 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)400 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max400 W
- Drain-source On Resistance-Max0.1 ohm
- Pulsed Drain Current-Max (IDM)180 A
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BSM244F