BSM20GD60DN2
EUPEC GMBH & CO KG
- 生命周期状态Transferred
- 说明Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- J-STD-609 Codee0
- VCEsat-Max (V)2.7
- Terminal FinishTin/Lead (Sn/Pb)
- Number of Elements1
- Power Dissipation-Max (W)90
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)600
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BSM20GD60DN2