INFINEON TECHNOLOGIES AG BSM200GB120DN2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSM200GB120DN2

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT Modules 1200V 200A DUAL
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3.2
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1400
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
190
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
630
Collector Current-Max (IC) (A)
290
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED