BSM200GB120DL
EUPEC GMBH & CO KG
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PXFM-X
- ConfigurationSERIES, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Terminal PositionUNSPECIFIED
- Number of Elements2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Collector Current-Max (IC)200 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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BSM200GB120DL