INFINEON TECHNOLOGIES AG BSM200GA170DN2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSM200GA170DN2

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 290A I(C), 1700V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
3.9 V
Number of Elements
1
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
290 A
Power Dissipation-Max (Abs)
1750 W
Collector-emitter Voltage-Max
1700 V