INFINEON TECHNOLOGIES AG BSM181/R | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSM181/R

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 36A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-X4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UPPER
Additional Feature
FRED FET
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
36 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Power Dissipation-Max (Abs)
700 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.24 ohm