INFINEON TECHNOLOGIES AG BSM150GXR120DN2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSM150GXR120DN2

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
3.7 V
Number of Elements
1
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
150 A
Power Dissipation-Max (Abs)
1050 W
Collector-emitter Voltage-Max
1200 V