INFINEON TECHNOLOGIES AG BSM150GB120DN2E3166 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSM150GB120DN2E3166

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
3
Number of Elements
1
Power Dissipation-Max (W)
1250
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
210
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200