Siemens AG BSM150GB120DN2 | 搜芯易Sourcengine

Siemens AG BSM150GB120DN2

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-CUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Fall Time-Max (ns)
100
Number of Elements
2
Number of Terminals
7
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
200
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
400
Turn-on Time-Nom (ton) (ns)
200
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Max (toff) (ns)
800
Turn-off Time-Nom (toff) (ns)
600
Collector Current-Max (IC) (A)
210
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Power Dissipation Ambient-Max (W)
2500