EUPEC GMBH & CO KG BSM10GP120 | 搜芯易Sourcengine

EUPEC GMBH & CO KG BSM10GP120

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X24
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.85
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
7
Number of Terminals
24
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
100
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
1200