EUPEC GMBH & CO KG BSM100GB170DN2 | 搜芯易Sourcengine

EUPEC GMBH & CO KG BSM100GB170DN2

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3.9
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1000
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
650
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
960
Collector Current-Max (IC) (A)
100
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1700