Siemens AG BSM05GD100DN1 | 搜芯易Sourcengine

Siemens AG BSM05GD100DN1

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 5A I(C), 1000V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PUFM-T17
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
17
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
5
Collector-emitter Voltage-Max (V)
1000
Power Dissipation Ambient-Max (W)
30