Siemens AG BSM05GD100D | 搜芯易Sourcengine

Siemens AG BSM05GD100D

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 5.5A I(C), 1000V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
3.3 V
JESD-30 Code
R-PUFM-P17
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
17
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
15 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
120 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
5.5 A
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.2 V
Collector-emitter Voltage-Max
1000 V
Power Dissipation Ambient-Max
30 W