INFINEON TECHNOLOGIES AG BSL606SNH6327TR | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSL606SNH6327TR

生命周期状态
Active
说明
Power Field-Effect Transistor, 4.5A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
4.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Avalanche Energy Rating (Eas) (mJ)
14
Pulsed Drain Current-Max (IDM) (A)
18.1
Drain-source On Resistance-Max (ohm)
0.06
Screening Level / Reference Standard
AEC-Q101