INFINEON TECHNOLOGIES AG BSF035NE2LQ | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSF035NE2LQ

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 22A I(D), 25V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-MBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e4
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Silver/Nickel (Ag/Ni)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
22 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
25 V
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
50 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.0046 ohm
Pulsed Drain Current-Max (IDM)
276 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED