INFINEON TECHNOLOGIES AG BSC190N12NS3G | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSC190N12NS3G

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-N8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
69
Drain Current-Max (ID) (A)
8.6
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
120
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
60
Pulsed Drain Current-Max (IDM) (A)
176
Drain-source On Resistance-Max (ohm)
0.019
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED