INFINEON TECHNOLOGIES AG BSC050N03MSGATMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSC050N03MSGATMA1

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N-CH 30V 16A/80A TDSON
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
16
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
35
Pulsed Drain Current-Max (IDM) (A)
320
Drain-source On Resistance-Max (ohm)
0.0063