INFINEON TECHNOLOGIES AG BSC0501NSI | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSC0501NSI

生命周期状态
Active
说明
Power Field-Effect Transistor, 29A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
29
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
20
Pulsed Drain Current-Max (IDM) (A)
400
Drain-source On Resistance-Max (ohm)
0.0024
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED