INFINEON TECHNOLOGIES AG BSB280N15NZ3GXT | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSB280N15NZ3GXT

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 9A I(D), 150V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-MBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
150
Avalanche Energy Rating (Eas) (mJ)
120
Pulsed Drain Current-Max (IDM) (A)
120
Drain-source On Resistance-Max (ohm)
0.028