INFINEON TECHNOLOGIES AG BSB280N15NZ3G | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSB280N15NZ3G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
BSB280N15 - 12V-300V N-CHANNEL P
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-MBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Silver/Nickel (Ag/Ni)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
57
Drain Current-Max (ID) (A)
9
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
150
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
120
Pulsed Drain Current-Max (IDM) (A)
120
Drain-source On Resistance-Max (ohm)
0.028
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED